Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1943-1952

  Tsormpatzoglou, Andreas ^a   Dimitriadis, Charalabos A ^a   Clerc, Raphaël ^b   Rafhay, Quentin ^b   Pananakakis, G ^b   Ghibaudo, Gérard ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

Semi analytical modeling; Short channel effects (SCEs); Si and Ge double gate (DG) MOSFETs

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON DISTRIBUTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

PONTENTIAL DISTRIBUTION; SEMI-ANALYTICAL MODELING; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 34547875434     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901075     Document Type: Article

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