Band to band tunneling limited off state current in ultra-thin body double gate FETs with high mobility materials: III-V, Ge and strained Si/Ge

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 389-392

  Kim, Dongrryun ^a   Krishnamohan, Tejas ^a   Nishi, Yoshio ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SPECIFICATIONS;

BAND TUNNELING MODEL; BANDGAP MATERIALS; MOBILITY MATERIALS;

SEMICONDUCTOR DEVICES;

EID: 42549117204     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282916     Document Type: Conference Paper

References (10)

1. T. Krishnamohan, D. Kim, C. Nguyen, C. Jungemann, Y. Nishi, K. Saraswat, "High mobility, low band-to-band-tunneling (BTBT), double gate heterostruoture FETs : simulations", IEEE Transactions Electron Devices (TED) Special Issue on 'Non-classical Si CMOS devices and technologies extending the roadmap', pp. 990, 2006
2. T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, K.C. Saraswat, "Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)" Symposium on VLSI Technology, pp. 82-83, 2005.
3. T. Krishnamohan, D. Kim, C. Jungemann. Y. Nishi. K.Saraswat, "Strained-Si, Relaxed-Ge or strained-SiGe for Future Nanoscale PMOSFETs", IEEE Symposium on VLSI Technology, 2006.
4. A. Pethe, T. Krishnamohan, D. Kim, S. Oh, P. Wong, K. Saraswat, "Investigation of Performance limits of III-V double-gate NMOSFETs", IEEE International Eleotron Devices Meeting (IEDM), pp. 605-608, 2005.
5. E.O. KANE, "Zener tunneling in semiconductors", Journal of the Physics and Chemistry of Solids, v.8, pp.38-44, 1959.
6. M.V. Fischetti, S.E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys", Journal of Applied Physics, pp. 2234-2252, 1996.
7. M.V. Fischetti, "Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures - Part I: Homogeneous Transport", IEEE Transactions on Electron Devices, vol. 38, No. 3, pp. 634-649, March 1991.
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