Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivation

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 479-481

  Wu, Nan ^a   Zhang, Qingchun ^a   Chan, D S H ^a   Balasubramanian, N ^b   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Chemical vapor deposited (CVD); Germanium (Ge); HfO2; High ; MOSFET; Surface passivation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYSTERESIS; PASSIVATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

GATE DIELECTRIC PASSIVATION; HAFNIUM DIOXIDE; INTERFACE TRAP DENSITY; SILICON SURFACE PASSIVATION;

MOSFET DEVICES;

EID: 33744769709     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.874209     Document Type: Article

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