Si/SiGe heterostructures for advanced microelectronic devices

Phase Transitions

Volumn 81, Issue 7-8, 2008, Pages 751-772

  Berbezier, I ^a   Ronda, A ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Electrical, optical and structural properties; Heterostructure; Molecular beam epitaxy; SiGe; Stress engineered structures

Indexed keywords

CHLORINE COMPOUNDS; DEFECT STRUCTURES; ELECTRON BEAMS; GROWTH KINETICS; MODULATION; NANOSTRUCTURES; OPTOELECTRONIC DEVICES; PHASE INTERFACES; PHASE TRANSITIONS; RESONANT TUNNELING; THICK FILMS;

3D NANOSTRUCTURES; ACCURATE CONTROL; CONTROL AND ADJUSTMENT; DOPING PROFILES; DRIVING FORCES; ELECTRICAL, OPTICAL AND STRUCTURAL PROPERTIES; EXCHANGE RATES; GROWTH INSTABILITIES; HETEROSTRUCTURE; HETEROSTRUCTURES; MICRO-ELECTRONIC DEVICES; MOLECULAR BEAM EPITAXY; MORPHOLOGICAL EVOLUTIONS; NEW GENERATION; PHYSICAL PROPERTIES; QUANTUM WELLS; RESONANT TUNNELLING DIODE; SI1-XGEX; SIGE; SINGLE-ELECTRON TRANSISTOR; SIZE REDUCTIONS; STRESS ENGINEERED STRUCTURES; SURFACE AND INTERFACES; THIN FILMS; THIN LAYERING; ULTRA-SHALLOW JUNCTIONS; VELOCITY-MODULATION;

FIELD EFFECT TRANSISTORS;

EID: 49149095099     PISSN: 01411594     EISSN: 10290338     Source Type: Journal    
DOI: 10.1080/01411590802130576     Document Type: Article

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