Thermal roughening of a thin film: A new type of roughening transition

Physical Review Letters

Volumn 85, Issue 10, 2000, Pages 2152-2155

  Maxson, J B ^a   Savage, D E ^a   Liu, Feng ^a   Tromp, R M ^b   Reuter, M C ^b   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MONOLAYERS; PHASE TRANSITIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THIN FILMS;

LOW-ENERGY ELECTRON MICROSCOPY; THERMAL ROUGHENING;

SEMICONDUCTING FILMS;

EID: 18144444053     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.2152     Document Type: Article

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