Challenges of high Ge content silicon germanium structures

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 3-8

  Kasper, E ^a   Heim, S ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

CMOS; HBT; Heterostructures; Lattice mismatch; Quantum dot; Silicon germanium; Strain; Transistor; Virtual substrate

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL LATTICES; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE CONSTANTS; MICROELECTRONICS; MORPHOLOGY; NUCLEATION; PLASTIC DEFORMATION; RESONANCE; SEMICONDUCTOR QUANTUM DOTS;

HETEROBIPOLAR TRANSISTORS (HBT); LATTICE MISMATCH; SILICON GERMANIUM STRUCTURES; VIRTUAL SUBSTRATES (VS);

SILICON COMPOUNDS;

EID: 1142292416     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.022     Document Type: Conference Paper

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