Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3158-3163

  Portavoce, A ^a   Gas, P ^a   Berbezier, I ^b   Ronda, A ^b   Christensen, J S ^c   Svensson, B ^c  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPRESSIVE STRESS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; GERMANIUM; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; MOLECULAR BEAM EPITAXY; SEGREGATION (METALLOGRAPHY); SURFACE PROPERTIES; TENSILE TESTING;

BIAXIAL STRESS; LATTICE DIFFUSION; SURFACE ENERGY ANALYSIS; SURFACE SEGREGATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 4944229207     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1781767     Document Type: Article

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