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Volumn 308-310, Issue , 2001, Pages 554-557

High resolution minority carrier transient spectroscopy of defects in Si and Si/SiGe quantum wells

Author keywords

Laplace MCTS; Quantum wells; SiGe

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRON TUNNELING; HOLE TRAPS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS;

EID: 18744437764     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00825-0     Document Type: Article
Times cited : (6)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.