Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 23, 1996, Pages 16799-16812

  Schmalz, K ^a   Yassievich, I ^b  

^a IHP   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011182347     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.16799     Document Type: Article

References (26)

1. Heterojunction Band Discontinuities: Physics and Device Applications, edited by F. Capasso and G. Margaritondo (Elsevier, Amsterdam, 1987).
2. D. V. Lang, in Heterojunction Band Discontinuities: Physics and Device Applications (Ref. 1), p. 377.
3. N. Debbar, Dipankar Biswas and Pallab Bhattcharya, Phys. Rev. B 10, 1058 (1989).
4. K. L. Jiao and W. Anderson, J. Appl. Phys. 73, 271 (1993).
5. G. Grumt and R. Pickenhain, Solid State Commun. 73, 257 (1990).
6. X. Letartre, D. Stievenard and E. Barbier, Appl. Phys. Lett. 58, 1047 (1991).
7. L. Vescan, R. Apetz and H. Lüth, J. Appl. Phys. 73, 7427 (1993).
8. K. Schmalz, I. N. Yassievich, H. Rücker, H. G. Grimmeiss, H. Frankenfeld, W. Mehr, H. J. Osten, P. Schley and H. P. Zeindl, Phys. Rev. B 50, 14t287 (1994).
9. K. Schmalz, H. Rücker, H. P. Zeindl and I. N. Yassievich, Superlattices Microstruct. 16, 105 (1994).
10. O. Chretien, R. Apetz, L. Vescan, A. Souifi, H. Lüth, K. Schmalz and J. J. Koulmann, J. Appl. Phys. 78, 5439 (1995).
11. Qinhua Wang, Fang Lu, Dawei Gong, Xiangjung Chen, Jianbao Wang, Henghui Sun, and Xun Wang, Phys. Rev. B 50, 18t226 (1994).
12. X. Letartre, D. Stievenard and E. Barbier, J. Appl. Phys. 69, 7912 (1991).
13. K. Kreher, Phys. Status Solidi A 135, 597 (1993).
14. K. Nauka, T. I. Kamins, J. E. Turner, C. A. King, J. L. Hoyt and J. F. Gibbons, Appl. Phys. Lett. 60, 195 (1992).
15. I. N. Yassievich, K. Schmalz and M. Beer, Semicond. Sci. Technol. 9, 1763 (1994).
16. M. M. Rieger and P. Vogel, Phys. Rev. B 48, 14t276 (1993).
17. B. Laikhtman and R. A. Kiehl, Phys. Rev. B 47, 10t515 (1993).
18. A. Gold, Phys. Rev. B 35, 723 (1987).
19. A. Gold, Solid State Commun. 60, 531 (1986).
20. H. Sakaki, in Physics of Nanostructures, Scottish Universities Summer School in Physics, edited by J. H. Davies and A. R. Long (Institute of Physics, Bristol, 1992), p. 1.
21. A. Gold, Phys. Rev. B 38, 10t798 (1988).
22. A. L. Efros, B. I. Shklovskii, in Electron-Electron Interaction in Disordered Systems, edited by A. L. Efros and M. Pollak (North-Holland, Amsterdam, 1985), p. 1.
23. A. L. Efros and F. G. Pikus, Solid State Commun. 96, 183 (1995).
24. N. F. Mott, Metal-Insulator Transitions (Taylor & Francis, London, 1993).
25. B. L. Shklovskii and A. L. Efros, Electronic Processes in Doped Semiconductors (Springer-Verlag, Berlin, 1984).
26. I. S. Shlimak, A. L. Efros and I. Ya. Yanchev, Fiz. Tekh. Poluprovodn. 2, 262 (1977) [Sov. Phys. Semicond. 11, 149 (1977)].