Influence of Si(001) substrate misorientation on morphological and optical properties of Ge quantum dots

Journal of Applied Physics

Volumn 98, Issue 6, 2005, Pages

  Berbezier, I ^a   Descoins, M ^b   Ismail, B ^c   Maaref, H ^c   Ronda, A ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b CNRS   (France)

^c FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION POWER; OPTICAL TRANSITIONS; POLARIZATION ANISOTROPY; SUBSTRATE MISORIENTATION;

ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC WAVE POLARIZATION; ELECTRON TRANSITIONS; GERMANIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SILICON;

SEMICONDUCTOR QUANTUM DOTS;

EID: 26244451363     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2040004     Document Type: Article

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