Hole trapping in self-assembled SiGe quantum nanostructures

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 338-344

  Volpi, F ^a,b   Peaker, A R ^a   Hawkins, I D ^a   Halsall, M P ^a   Kenway, P B ^a   Portavoce, A ^b   Ronda, A ^b   Berbezier, I ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b CAMPUS DE LUMINY   (France)

Author keywords

Boron; DLTS; Germanium; Nanostructures; PL; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; GROUND STATE; HOLE TRAPS; LIGHT EMISSION; LOW TEMPERATURE EFFECTS; MORPHOLOGY; NUCLEATION; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; POINT DEFECTS; RELAXATION PROCESSES; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); NANOSTRUCTURES; QUANTUM NANOSTRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 1642310748     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00755-9     Document Type: Conference Paper

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