Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 250-253

  De Berranger, E ^a,b   Bodnar, S ^a   Chantre, A ^a   Kirtsch, J ^a   Monroy, A ^a   Granier, A ^a   Laurens, M ^a   Regolini, J L ^a   Mouis, M ^a  

^a ORANGE LABS   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Germanium; Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

BICMOS TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031071440     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09220-6     Document Type: Article

References (5)

1. E. Crabbé et al., 113 GHz fT graded-base SiGe HBTs, IEEE Trans. Electron Devices, 40 (11) (1993) 2100-2101.
2. E. Kasper et al., Growth of 100 GHz SiGe-heterobipolar transistor (HBT) structures, Jpn. J. Appl. Phys., 33 (1, 4B) (1994) 2415-2418.
3. A. Granier et al., High performance of a quasi-self-aligned 0.5 BiCMOS technology, Proc. 1995 IEEE Int. Topical Meeting Nomadic Microwave Technologies and Techniques for Mobile Communications and Detection, IEEE, New York, 1995, pp. 11-13.
4. 2 deposition by integrated chemical vapor deposition, Appl. Surf. Sci., 100/101 (1996) 566-574.
5. S. Bodnar et al., Single wafer Si and SiGe processes for advanced ULSI technologies, European Materials Research Society Symp. Proc., paper D-VI.