An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Γ point

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 769-773

  Han, Genquan ^a   Yu, Jinzhong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; LIGHT SCATTERING; PHASE EQUILIBRIA; SEMICONDUCTING SILICON;

ELECTRON EFFECTIVE MASS; QUANTUM CASCADE (QC) STRUCTURE; QUASI-EQUILIBRIUM DISTRIBUTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547354390     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/016     Document Type: Article

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