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Volumn 224, Issue 1-4, 2004, Pages 63-67
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A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth
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Author keywords
Chemical vapour etch; CVD; SEG; Si etch back; SiGe; Ultra shallow junctions
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CONTAMINATION;
CRYSTAL DEFECTS;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
ETCHING;
HYDROCHLORIC ACID;
CHEMICAL VAPOR ETCHING (CVE);
DOPANTS;
DRAIN JUNCTIONS;
SELECTIVE EPITAXIAL GROWTH (SEG);
SI ETCH BACK;
SIGE;
ULTRA-SHALLOW-JUNCTIONS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 1142280323
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2003.08.030 Document Type: Conference Paper |
Times cited : (39)
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References (9)
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