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Volumn 224, Issue 1-4, 2004, Pages 63-67

A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth

Author keywords

Chemical vapour etch; CVD; SEG; Si etch back; SiGe; Ultra shallow junctions

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONTAMINATION; CRYSTAL DEFECTS; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; HYDROCHLORIC ACID;

EID: 1142280323     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.030     Document Type: Conference Paper
Times cited : (39)

References (9)
  • 7
    • 33646216884 scopus 로고    scopus 로고
    • Optimization and monitoring of cleaning processes for 100 nm and smaller design rules
    • Singapore
    • F. Holsteyns, et al. Optimization and monitoring of cleaning processes for 100 nm and smaller design rules, in: KLA-Tencor Yield Management Seminar, Singapore, 2001.
    • (2001) KLA-Tencor Yield Management Seminar
    • Holsteyns, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.