Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices

Ultramicroscopy

Volumn 101, Issue 2-4, 2004, Pages 63-72

  Wang, Y Y ^a   Kawasaki, M ^b   Bruley, J ^a   Gribelyuk, M ^a   Domenicucci, A ^a   Gaudiello, J ^a  

^a IBM MICROELECTRONICS   (United States)

^b JEOL USA INC   (United States)

Author keywords

2 D junction profile; 61.14.Nm; 85.30.De; Electron holography; Semiconductor device characterization

Indexed keywords

ELECTRIC POTENTIAL; IMAGE ANALYSIS; IMAGING SYSTEMS; LENSES; PRISMS; SEMICONDUCTOR DEVICES; SENSITIVITY ANALYSIS;

DUAL-LENS IMAGING SYSTEMS; OFF-AXIS ELECTRON HOLOGRAPHY; SEMICONDUCTOR TECHNOLOGY;

HOLOGRAPHY;

PLATINUM;

CALCULATION; CAMERA; CONTRAST; DEVICE; ELECTRIC POTENTIAL; ELECTRON; ELECTRON BEAM; EXCITATION; FIELD EMISSION; FILTER; GEOMETRY; HOLOGRAPHY; ILLUMINATION; IMAGE ANALYSIS; IMAGE ENHANCEMENT; IMAGING SYSTEM; LENS; LINEAR SYSTEM; MATHEMATICAL ANALYSIS; MATHEMATICAL MODEL; PRISM; REDUCTION; REVIEW; SEMICONDUCTOR; VIRTUAL REALITY; VISIBILITY;

EID: 4644297612     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2004.04.003     Document Type: Article

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