Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Yeo, Yee Chia ^a   Sun, Jisong ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

LATERAL STRAIN; LATERAL STRAIN COMPONENTS; LINEAR INTERPOLATION; STRAIN DISTRIBUTION;

BOUNDARY CONDITIONS; FINITE ELEMENT METHOD; GERMANIUM; HOLE MOBILITY; INTERPOLATION; LATTICE CONSTANTS; MOS DEVICES; POISSON RATIO; SILICON; STRAIN; STRESS ANALYSIS;

FIELD EFFECT TRANSISTORS;

EID: 19744383008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846152     Document Type: Article

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