Ir-based diffusion barriers for Ohmic contacts to p-GaN

Applied Surface Science

Volumn 254, Issue 13, 2008, Pages 4134-4138

  Voss, L F ^a   Stafford, L ^a   Gila, B P ^a   Pearton, S J ^a   Ren, F ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

GaN; Ohmic contacts

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SPECTROSCOPY; METALLIZING; OHMIC CONTACTS; TEMPERATURE MEASUREMENT;

ELECTRICAL CONTACTS; SPECIFIC CONTACT RESISTANCE;

GALLIUM NITRIDE;

EID: 41749094255     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.12.046     Document Type: Article

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