Study of the electrical, structural and surface morphological characteristics of Pt/Re/Au ohmic contacts on p-type GaN

Materials Chemistry and Physics

Volumn 93, Issue 2-3, 2005, Pages 286-290

  Reddy, V Rajagopal ^a  

^a UNIVERSITY OF MYSORE   (India)

Author keywords

Auger electron microscopy; Glancing angle XRD; p GaN; Pt Re Au ohmic contacts

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DEGRADATION; ELECTRIC CURRENTS; ELECTROCHEMISTRY; GALLIUM NITRIDE; GOLD; INTERFACES (MATERIALS); MORPHOLOGY; PLATINUM; RHENIUM; SURFACE ROUGHNESS; SURFACES; VOLTAGE CONTROL; X RAY DIFFRACTION;

GLANCING ANGLE XRD; INTERFACIAL REACTIONS; P-GAN; PT/RE/AU OHMIC CONTACTS;

OHMIC CONTACTS;

EID: 20844442230     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2005.03.062     Document Type: Article

References (19)

1. S. Nakamura, M. Senoh, and T. Mukai Appl. Phys. Lett. 62 1993 2390
2. S. Nakamura, M. Senoh, S. Nagahana, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Unemoto, S. Sano, and K. Chocho Appl. Phys. Lett. 72 1998 2014
3. M.A. Khan, A.R. Bhattarai, J.N. Kuznia, and D.T. Olson Appl. Phys. Lett. 63 1993 1214
4. M. Murakami, and Y. Koide Crit. Rev. Solid State Mater. Sci. 23 1998 1
5. J.K. Ho, C.-S. Jong, C.C. Chiu, C.-N. Hung, and K.-K. Shih Appl. Phys. Lett. 74 1999 1275
6. J.S. Jang, K.H. Park, H.K. Jang, H.G. Kim, and S.-J. Park J. Vac. Sci. Technol. B 16 1998 3105
7. D.J. Kim, L. Zhang, J.C. Ramer, S.-D. Hersee, and L.F. Laster Mater. Res. Soc. Symp. Proc. 468 1997 421
8. J.S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. Lee, and S.-J. Park Appl. Phys. Lett. 74 1999 70
9. L. Zhou, W. Lanford, A.T. Ping, I. Adesida, J.W. Yang, and A. Khan Appl. Phys. Lett. 76 2000 3451
10. J.-S. Jang, S.-J. Park, and T.-Y. Seong Appl. Phys. Lett. 76 2000 2898
11. J.-S. Jang, C.-W. Lee, S.-J. Park, T.-Y. Seong, and I.T. Ferguson J. Electron. Mater. 31 2002 903
12. X.A. Cao, S.J. Pearton, F. Ren, and J.R. Lothian Appl. Phys. Lett. 73 1998 942
13. H.K. Kim, T.-Y. Seong, and C.-R. Lee J. Electron. Mater. 30 2001 266
14. J.-S. Jang, S.-J. Park, and T.-Y. Seong J. Electrochem. Soc. 146 1999 3425
15. V. Rajagopal Reddy, S.-H. Kim, J.O. Song, and T.-Y. Seong Semicond. Sci. Technol. 18 2003 541
16. J.S. Jang, K.H. Park, H.K. Jang, H.G. Kim, and S.-J. Park J. Vac. Sci. Technol. B 16 1998 3105
17. J.S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. Lee, and S.-J. Park Appl. Phys. Lett. 74 1999 70
18. J. Sun, K.A. Rickert, J.M. Redwing, A.B. Ellis, F.J. Himpsel, and T.F. Kuech Appl. Phys. Lett. 76 2000 415
19. J.S. Jang, H.G. Kim, K.H. Park, C.-S. Um, I.-K. Han, S.-H. Kim, H.K. Jang, and S.-J. Park Mater. Res. Soc. Symp. Proc. 482 1998 1053