Decrease of charge collection due to displacement damage by Gamma rays in a 6H-SiC diode

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 1953-1960

  Onoda, Shinobu ^a   Ohshima, Takeshi ^a   Hirao, Toshio ^a   Mishima, Kenta ^b   Hishiki, Shigeomi ^a   Iwamoto, Naoya ^b   Kojima, Kazuhisa ^c   Kawano, Katsuyasu ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

6H SiC junction diode; Carrier removal rate; CCE; Diffusion length; TIBIC system

Indexed keywords

CHARGE CARRIERS; DIFFUSION; GAMMA RAYS; HYDROGEN; SILICON CARBIDE;

CARRIER REMOVAL RATE; CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY (CCE); JUNCTION DIODES; LENGTH DEGRADATION;

DIODES;

EID: 37249062689     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.910203     Document Type: Conference Paper

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