Degradation of charge collection efficiency obtained for 6H-SiC n+p diodes irradiated with gold ions

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 913-916

  Ohshima, T ^a   Satoh, T ^a   Oikawa, M ^a   Onoda, S ^a   Hishiki, S ^a   Hirao, T ^a   Kamiya, T ^a   Yokoyama, T ^b   Sakamoto, A ^b   Tanaka, R ^b   Nakano, I ^b   Wagner, G ^c   Itoh, H ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

6H SiC n+p diode; Charge collection efficiency (CCE); Gold ions; Transient ion beam induced current (TIBIC)

Indexed keywords

DIODES; GOLD; ION BEAMS; ION BOMBARDMENT; IONS; POWER QUALITY;

CHARGE COLLECTION EFFICIENCY; FALL TIME; GOLD ION (AU); GOLD IONS; IDEAL VALUES; REVERSE BIAS; TRANSIENT CURRENT; TRANSIENT ION BEAM-INDUCED CURRENT;

SILICON CARBIDE;

EID: 38449102330     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.913     Document Type: Conference Paper

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