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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumn 190, Issue 1-4, 2002, Pages 329-334
Investigation of the radiation hardness on semiconductor devices using the ion micro-beam
(3)
Nishijima, T
a
Ohshima, T
b
Lee, K K
b
a
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST
(
Japan
)
b
JAPAN ATOMIC ENERGY AGENCY
(
Japan
)
Author keywords
[No Author keywords available]
Indexed keywords
IRRADIATION; RADIATION HARDENING; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE;
ION BEAM INDUCED CHARGE (IBIC); ION MICRO-BEAMS;
ION BEAMS;
EID
:
0036568905
PISSN
:
0168583X
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0168-583X(01)01243-5
Document Type
:
Conference Paper
Times cited : (
11
)
References (
20
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
