Impact of auger recombination on charge collection of a 6H-SiC diode by heavy ions

IEEE Transactions on Nuclear Science

Volumn 54, Issue 6, 2007, Pages 2706-2713

  Onoda, S ^a   Ohshima, T ^a   Hirao, T ^a   Mishima, K ^b   Hishiki, S ^a   Iwamoto, N ^b   Kawano, K ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

6H SiC diode; Auger recombination; CCE; PHD; TCAD; TIBIC system

Indexed keywords

COMPUTER AIDED DESIGN; HEAVY IONS; ION BEAMS; NUMERICAL ANALYSIS; SILICON COMPOUNDS;

AUGER RECOMBINATION; TIBIC SYSTEM;

DIODES;

EID: 37249002829     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.908459     Document Type: Conference Paper

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