Observation of transient current induced in silicon carbide diodes by ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 979-983

  Ohshima, Takeshi ^a   Lee, Kin K ^a   Onoda, Shinobu ^b   Kamiya, Tomihiro ^a   Oikawa, Masakazu ^a   Laird, Jamie S ^a   Hirao, Toshio ^a   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Heavy ion microbeam; Silicon carbide; Transient ion beam induced current

Indexed keywords

DIODES; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ION BEAMS;

ION IRRADIATION;

SILICON CARBIDE;

EID: 0037904990     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00906-6     Document Type: Conference Paper

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