Minority carrier diffusion length measurements in 6H-SiC

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Polyakov, Alexander Y ^a   Li, Qiang ^a   Huh, Sung Wook ^a   Skowronski, Marek ^a   Lopatiuk, Olena ^b   Chernyak, Leonid ^b   Sanchez, Edward ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c DOW CHEMICAL COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DIFFUSION; DEEP LEVELS TRANSIENT SPECTROSCOPY; DIFFUSION LENGTH; POWER LAW;

CHEMICAL BONDS; CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); ELECTRON TRAPS; EPITAXIAL GROWTH; PHYSICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

SEMICONDUCTOR GROWTH;

EID: 20644469043     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1853501     Document Type: Article

References (31)

1. T. P. Chow, N. Ramungul, J. Fedison, and Y. Tang, SiC Power Bipolar transistors and Thyristors, in Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer Verlag, Berlin, 2003), pp. 737-768; also: Y. Sugawara, High Voltage SiC Devices (Springer Verlag, Berlin, 2003), pp. 769-784.
2. T. P. Chow, N. Ramungul, J. Fedison, and Y. Tang, SiC Power Bipolar transistors and Thyristors, in Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer Verlag, Berlin, 2003), pp. 737-768; also: Y. Sugawara, High Voltage SiC Devices (Springer Verlag, Berlin, 2003), pp. 769-784.
3. K. Fujihira, S. Tamura, T. Kimoto, and H. Matsunami, IEEE Trans. Electron Devices 49, 150 (2002).
4. M. Levinstein, T. Mnatsakanov, P. Ivanov, J. Palmour, S. Rumyantsev, R. Singh, and S. N. Yurkov, IEEE Trans. Magn. 48, 1703 (2001).
5. A. V. Naumov and V. I. Sankin, Sov. Phys. Semicond. 23, 630 (1989).
6. M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, A. P. Strel'chuk, and A. E. Cherenkov, Sov. Phys. Semicond. 25, 289 (1991).
7. J. P. Bergman, O. Kordina, and E. Janzen, Phys. Status Solidi A 162, 65 (1997).
8. O. Kordina, J. P. Bergman, A. Henry, and E. Janzen, Appl. Phys. Lett. 66, 189 (1995).
9. O. Kordina, J. P. Bergman, C. Hallin, and E. Janzen, Appl. Phys. Lett. 69, 679 (1996).
10. W. A. Doolittle, A. Rohatgi, R. Ahrienkel, D. Levi, G. Augustine, and R. H. Hopkins, Mater. Res. Soc. Symp. Proc. 483, 197 (1998).
11. M. Tabib-Azar, S. M. Habbard, C. M. Schnabel, and S. Bailey, J. Appl. Phys. 84, 3986 (1998).
12. T. Tawara, H. Tsuchida, S. Izumi, I. Kamata, and K. Izumi, Mater. Sci. Forum 457-460, 565 (2004).
13. J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. Janzen, J. Appl. Phys. 93, 4708 (2003).
14. H. K. Kuiken and C. J. Van Opdorp, J. Appl. Phys. 57, 2077 (1985).
15. L. Chernyak, A. Osinsky, and A. Schulte, Solid-State Electron. 45, 1687 (2001).
16. G. Augustine, H. M. Hobgood, V. Balakrishna, G. Dunne, and R. H. Hopkins, " Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype., " in Silicon Carbide, A Review of Fundamental Questions and Applications to Current Device Technology, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Akademie Verlag, Berlin, 1997), Vol. I, pp. 137-148.
17. P. Grivikas, J. Linnros, and V. Grivikas, J. Mater. Res. 16, 524 (2001).
18. W. J. Choyke and R. P. Devaty, " Optical Properties of SiC:1997-2002., " in Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer Verlag, Berlin, 2003), pp. 413-436.
19. W. Monch, The Continuum of Interface-Induced Gap States-The Unifying Concept of the Band Lineup at Semiconductor Interfaces-Application to Silicon Carbide (Springer Verlag, Berlin, 2003), pp. 317-342.
20. S. Yu. Karpov, Yu. N. Makarov, and M. S. Ramm, Phys. Status Solidi B 202, 201 (1997).
21. D. J. Larkin, Phys. Status Solidi B 202, 305 (1997).
22. M. Ruff, H. Mitlehner, and R. Helbig, IEEE Trans. Electron Devices 41, 1040 (1994).
23. W. J. Choyke and G. Pensl, MRS Bull. 22, 25 (1997).
24. S. G. Sridhara, L. L. Vlemen, R. P. Devaty, W. J. Choyke, D. L. Larkin, H. S. Kong, T. Troffer, and G. Pensl, J. Appl. Phys. 83, 7909 (1998).
25. G. Wellenhofer and U. Rossler, Phys. Status Solidi B 202, 107 (1997).
26. L. S. Berman, Purity Control of Semiconductors by the Method of Capacitance Transient Spectroscopy (Electronic Integral Systems, St. Petersburg, 1995).
27. G. M. Martin, A. Mittonaeau, D. Pons, A. Mircea, and D. W. Woodard, J. Phys. C 13, 3855 (1980).
28. C. G. Hemmingson, N. T. Son, A. Ellison, J. Zhang, and E. Janzen, Phys. Rev. B 58, R10119 (1998).
29. N. T. Son, Mt. Wagner, C. G. Hemmingson, L. Storasta, B. Magnusson, W. M. Chen, S. Greulich-Weber, J.-M. Spaeth, and E. Janzen, " Electronic Structure of Deep Defects in SiC., " in Silicon Carbide: Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer-Verlag, Berlin, 2003), pp. 460-492.
30. V. N. Abakumov, V. I. Perel, and I. N. Yassievich, Sov. Phys. Semicond. 12, 1 (1978).
31. A. G. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1980).