Universal damage factor for radiation-induced dark current in silicon devices

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2451-2459

  Srour, J R ^a,b   Lo, D H ^b  

^a IEEE   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION-INDUCED DARK CURRENT; THERMAL GENERATION; UNIVERSAL DAMAGE FACTOR;

CRYSTAL DEFECTS; CURRENT DENSITY; IRRADIATION; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING;

RADIATION EFFECTS;

EID: 0034451543     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903792     Document Type: Conference Paper

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