Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3621-3628

  Beck, M J ^b   Tsetseris, L ^b   Caussanel, M ^c,d   Schrimpf, R D ^a,c   Fleetwood, D M ^a,c   Pantelides, S T ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d UNIVERSITÉ DE PERPIGNAN   (France)

Author keywords

Density functional theory; Displacement damage; Electron traps; Frenkel pairs

Indexed keywords

DISPLACEMENT DAMAGE; FRENKEL PAIRS; NON-IONIZING ENERGY LOSS (NIEL);

DOPING (ADDITIVES); ELECTRON TRAPS; ENERGY DISSIPATION; PROBABILITY DENSITY FUNCTION; QUANTUM THEORY;

SILICON;

EID: 33846267995     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885383     Document Type: Conference Paper

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