Proton radiation effects in 4H-SiC diodes and MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3748-3752

  Luo, Zhiyun ^a   Chen, Tianbing ^b   Ahyi, Ayayi C ^c   Sutton, Akil K ^b   Haugerud, Becca M ^b   Cressler, John D ^b   Sheridan, David C ^d   Williams, John R ^c   Marshall, Paul W ^e   Reed, Robert A ^e  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d IBM MICROELECTRONICS   (United States)

^e NASA HEADQUARTERS   (United States)

Author keywords

Negative channel metal oxide semiconductor (nMOS) capacitors; Schottky barrier diodes (SBDs)

Indexed keywords

ANNEALING; DOSIMETERS; LEAKAGE CURRENTS; MOS CAPACITORS; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SPECTROMETERS;

BUFFERED OXIDE ETCH (BOE); NEGATIVE CHANNEL METAL OXIDE SEMICONDUCTORS (NMOS); PION IRRADIATION;

PROTON BEAMS;

EID: 19944378763     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839254     Document Type: Conference Paper

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