Anomalous charge collection in silicon carbide schottky barrier diodes and resulting permanent damage and single-event burnout

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3343-3348

  Kuboyama, Satoshi ^a   Kamezawa, Chihiro ^b   Ikeda, Naomi ^a   Hirao, Toshio ^b   Ohyama, Hidenori ^c  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Heavy ion; Schottky barrier diode; Silicon carbide; Single event burnout

Indexed keywords

COMPUTER SIMULATION; HEAVY IONS; IRRADIATION; SILICON CARBIDE;

ANOMALOUS CHARGE COLLECTION; SINGLE EVENT BURNOUT;

SCHOTTKY BARRIER DIODES;

EID: 33846302763     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885165     Document Type: Conference Paper

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