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Volumn 91, Issue 3, 2002, Pages 2391-2397

Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CARRIER REMOVAL; CARRIER REMOVAL PROCESS; FRENKEL PAIRS; ISOCHRONAL ANNEALING; MINORITY CARRIER LIFETIMES; PHOTOVOLTAIC PARAMETERS; RADIATION TOLERANCES; ROOM TEMPERATURE; THERMAL-ANNEALING;

EID: 33845405726     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1433936     Document Type: Article
Times cited : (48)

References (37)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.