A detailed model to improve the radiation-resistance of si space solar cells

IEEE Transactions on Electron Devices

Volumn 46, Issue 10, 1999, Pages 2133-2138

  Yamaguchi, Masafumi ^a,b   Khan, Aurangzeb ^b   Taylor, Stephen J ^b   Imaizumi, Mitsuru ^a,b   Hisamatsu, Tadashi ^a,b   Matsuda, Sumio ^b  

^a IEEE   (Japan)

^b TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Modeling; Radiation effects; Radiation hardening; Silicon; Solar cells

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH FROM MELT; ELECTRON IRRADIATION; MATHEMATICAL MODELS; PROTON IRRADIATION; RADIATION DAMAGE; RADIATION HARDENING; SHORT CIRCUIT CURRENTS; SINGLE CRYSTALS; SOLAR RADIATION;

CARRIER REMOVAL RATE; CELL DEGRADATION; RADIATION DEGRADATION MODEL; RADIATION RESISTANCE;

SILICON SOLAR CELLS;

EID: 0033323713     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.792008     Document Type: Article

References (7)

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