Spectral response of a gamma and electron irradiated pin photodiode

IEEE Transactions on Nuclear Science

Volumn 49 III, Issue 3, 2002, Pages 1446-1449

  Onoda, S ^a   Hirao, T ^b   Laird, J S ^b   Mori, H ^a   Okamoto, T ^a   Koizumi, Y ^a   Itoh, H ^b  

^a TOKAI UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Equivalent displacement damage dose; Minority carrier diffusion length; Nonionizing energy loss (NIEL); Optical spectral response; Pin photodiode

Indexed keywords

CURRENT DENSITY; DOSIMETRY; ELECTRON IRRADIATION; GAMMA RAYS; LIGHT SOURCES; MONOCHROMATORS; PHOTODIODES; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON;

EQUIVALENT DISPLACEMENT DAMAGE DOSE; MINORITY CARRIER DIFFUSION LENGTH; NONIONIZING ENERGY LOSS; OPTICAL SPECTRAL RESPONSE;

RADIATION EFFECTS;

EID: 0036624463     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039681     Document Type: Article

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