Displacement damage-induced catastrophic second breakdown in silicon carbide schottky power diodes

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3193-3200

  Scheick, Leif ^a   Selva, Luis ^a   Becker, Heidi ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Avalanche breakdown; Displacement damage; Proton radiation; Schottky diode; Second breakdown; Silicon carbide; Thermal breakdown

Indexed keywords

ELECTRIC FIELDS; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; PERCOLATION (COMPUTER STORAGE); SILICON CARBIDE; THERMAL CONDUCTIVITY; THERMAL INSULATING MATERIALS;

AVALANCHE BREAKDOWN; DISPLACEMENT DAMAGE; PROTON RADIATION; SCHOTTKY DIODE; SECOND BREAKDOWN; THERMAL BREAKDOWN;

SEMICONDUCTOR DEVICES;

EID: 11144225511     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839195     Document Type: Conference Paper

References (26)

1. D. Braunig, D. Fritsch, B. Lehmann, and A. L. Barry, "Radiation- induced displacement damage in silicon carbide blue light-emitting diodes," IEEE Trans. Nucl. Sci., vol. 39, pp. 428-430, June 1992.
2. J. M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, "Silicon carbide JFET radiation response," IEEE Trans. Nucl. Sci., vol. 39, pp. 1974-1981, Dec. 1992.
3. A. L. Barry, B. Lehmann, D. Fritsch, and D. Braunig, "Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide," IEEE Trans. Nucl. Sci., vol. 38, pp. 1111-1115, Dec. 1991.
4. N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics: Converters, Applications, and Design, 3rd ed. New York: Wiley, 2003.
5. A. Trzynadlowski, Introduction to Modern Power Electronics. New York: Wiley, c1998.
6. P. C. Sen, Principles of Electric Machines and Power Electronics, 2nd ed. New York, NY: Wiley, c1997.
7. P. G. Neudeck, W. Huang, and M. Dudley, "Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p+-n junction diodes I. DC properties," IEEE Trans. Electron Devices, vol. 46, pp. 478-484, Mar. 1999.
8. C. J. Scozzie, J. M. McGarrity, J. Blackburn, and W. M. DeLancey, "Silicon carbide FETs for high temperature nuclear environments," IEEE Trans. Nucl. Sci., vol. 43, pp. 1642-1648, June 1996.
9. J. M. McGarrity, C. J. Scozzie, J. Blackburn, and W. M. Delancy, "High temperature silicon carbide FETs for radiation environments," in Proc. Nucl. Sci. Symp. Medical Imaging Conf., vol. 1, Oct. 1995, pp. 144-147.
10. A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, H. J. von Bardeleben, J.-L. Cantin, and S. Raymond, "Radiation hardness of gallium nitride," IEEE Trans. Nucl. Sci., vol. 49, pp. 2733-2738, Dec. 2002.
11. J. M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, "Silicon carbide JFET radiation response," IEEE Trans. Nucl. Sci., vol. 39, pp. 1974-1981, Dec. 1992.
12. F. B. McLean, J. M. McGarrity, C. J. Scozzie, C. W. Tipton, and W. M. DeLancey, "Analysis of neutron damage in high-temperature silicon carbide JFETs," IEEE Trans. Nucl. Sci., vol. 41, pp. 1884-1894, Dec. 1994.
13. P. G. Neudeck and C. Fazi, "Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p+-n junction diodes. II. Dynamic breakdown properties," IEEE Trans. Electron Devices, vol. 46, pp. 485-492, Mar. 1999.
14. P. G. Neudeck, W. Huang, M. Dudley, and C. Fazi, "Non-micropipe dislocations in 4H-SiC devices: Electrical properties and device technology implication," in Proc. MRS Symp., vol. 512, 1998, pp. 107-112.
15. V. J. Nagesh, W. Farmer, R. F. Davis, and H. S. Kong, "Defects in neutron irradiated SiC," Appl. Phys. Lett., vol. 50, no. 47, p. 27, Apr. 1987.
16. F. Gao and W. J. Weber, "Atomic-scale simulation of 50 keV Si displacement cascades in beta-SiC," Phys. Rev. B, vol. 63, pp. 054 101-054 101-7.
17. R. Devanathan, W. J. Weber, and F. Gao, "Atomic scale simulation of defect prodection in irradiated 3C-SiC," J. Appl. Phys., vol. 90, no. 5, pp. 2303-2309, 2000.
18. I. Kamata, H. Tsuchida, T. Jikimoto, and K. Izumi, "A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes," Silicon Carbide and Related Materials, vol. 389-393, pp. 1137-1140, 2001.
19. A. Amerasekera, M.-C. Chang, J. A. Seitchik, A. Chatterjee, K. Mayaram, and J.-H. Chern, "Self-heating effects in basic semiconductor structures," IEEE Trans. Electron Devices, vol. 40, pp. 1836-1844, Oct. 1993.
20. W. Kai, X. Hengkhun, and Ge. Jingpang, "Percolation and dielectric breakdown," in Proc. 4th Int. Conf. Properties and Applications of Dielectric Commercials, Brisbane, Australia, July 1994.
21. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, "New insights in the relation between electron trap generation and the statistical properties of oxide breakdown," IEEE Trans. Electron Devices, vol. 45, pp. 901-914, Apr. 1998.
22. W. H. Lin, K. L. Pey, Z. Dong, S. Y. M. Chooi, C. H. Ang, and J. Z. Zheng, "The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide," Electron Device Lett., vol. 24, no. 5, May 2003.
23. M. A. Alam, B. E. Weir, and P. J. Silverman, "A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance," IEEE Trans. Electron Devices, vol. 49, Feb. 2002.
24. S. S. Sombra, U. M. S. Costa, V. N. Freire, E. A. de Vasconcelos, and E. F. da Silva, "A percolation based dielectric breakdown model with randomic changes in the dielectric constant," Physica A, vol. 305, pp. 351-359, 2002.
25. V. Ferlet-Cavrois, S. Quoizola, O. Musseau, O. Flament, J. L. Leray, J. L. Pelloie, C. Raynaud, and O. Faynot, "Total dose induced latch in short channel NMOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 45, pp. 2458-2466, Dec. 1998.
26. F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, L. P. Schanwald, R. A. Loemker, K. S. Krisch, M. L. Green, B. E. Weir, and P. J. Silverman, "Precursor ion damage and angular dependence of single event gate rupture in thin oxides," IEEE Trans. Nucl. Sci., vol. 45, pp. 2509-2518, Dec. 1998.