Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 514, Issue 1-3, 2003, Pages 126-134

  Nava, F ^a   Vittone, E ^b   Vanni, P ^c   Fuochi, P G ^c   Lanzieri, C ^d  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF TURIN   (Italy)

^c CNR   (Italy)

^d ALENIA SPAZIO   (Italy)

Author keywords

Charge particle spectroscopy; Device simulation; Radiation hardness; Semiconductor detectors; Silicon carbide

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON IRRADIATION; EPITAXIAL GROWTH; GAMMA RAYS; OHMIC CONTACTS; RADIATION HARDENING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS;

RADIATION TOLERANCE;

NUCLEAR INSTRUMENTATION;

EID: 0242664852     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.08.094     Document Type: Conference Paper

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