Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide

IEEE Transactions on Nuclear Science

Volumn 51, Issue 1 II, 2004, Pages 238-244

  Nava, F ^a   Vanni, P ^a   Bruzzi, M ^b   Lagomarsino, S ^b   Sciortino, S ^b   Wagner, G ^c   Lanzieri, C ^d  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d ALENIA SPAZIO   (Italy)

Author keywords

Alpha particle; Epitaxial semiconductors; Minimum ionizing particle; Radiation detectors; Schottky contact; Silicon carbide; Spectroscopy

Indexed keywords

ALPHA PARTICLES; CHEMICAL VAPOR DEPOSITION; COLLIDING BEAM ACCELERATORS; CONSTRAINT THEORY; CURRENT DENSITY; DIFFUSION; DOPING (ADDITIVES); EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; OHMIC CONTACTS; POLARIZATION; SILICON CARBIDE; SILICON WAFERS;

CHARGE COLLECTION EFFICIENCY (CCE); EPITAXIAL SEMICONDUCTORS; MINIMUM IONIZING PARTICLES; SCHOTTKY CONTACT;

PARTICLE DETECTORS;

EID: 2342597115     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.825095     Document Type: Article

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