Demonstration of an SiC neutron detector for high-radiation environments

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 567-571

  Seshadri, S ^a   Dulloo, Abdul R ^a   Ruddy, Frank H ^b   Seidel, John G ^b   Rowland, L B ^c  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b WESTINGHOUSE ELECTRIC COMPANY   (United States)

^c Sterling Semiconductor Inc   (United States)

Author keywords

Alpha; Carrier removal rate; Detector; Diode; Gamma; Neutron; Nuclear; Particle; Pn junction; Radiation; Radiation damage; Schottky; Triton

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CHARGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; VOLTAGE MEASUREMENT;

NEUTRON COUNTING RATE;

NEUTRON DETECTORS;

EID: 0033096913     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748878     Document Type: Article

References (10)

1. A.L. Barry, B. Lehmann, D. Fritsch, and D. Braunig, "Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide," IEEE Trans. Nucl. Sci., vol. 38, pp. 1111-1115, June 1991.
2. R.V. Babcock and H. C. Chang, "SiC neutron detectors for hightemperature operation," Neutron Dosimetry 1, vol. 1, pp. 613-622, 1963.
3. V.A. Tikhomirova, O. P. Fedoseeva, and G. F. Kholuyanov, "Detector characteristics of a silicon carbide detectore perpared by the diffusion of beryllium," Atomnaya Energiya, vol. 34, no. 2, pp. 122-124, 158-159, 1973.
4. V.A. Tikhomirova, O. P. Fedoseeva, and V. V. Bol'shakov, "Silicon carbide detectors as fission-fragment counters in reactors," Izmeri-tel'naya Tekhnika, vol. 6, pp. 67-68, 1973.
5. F.H. Ruddy, A. R. Dulloo, J. G. Seidel, and S. Seshadri, "Development of a silicon carbide radiation detector," IEEE Trans. Nucl. Sci., vol. 45, pp. 536-541, June 1998.
6. S. Seshadri, A. R. Dulloo, F. H. Ruddy, and J. Seidel, "An advanced SiC nuclear radiation detector," in 55th Device Res. Conf. Dig., 1997, p. 114.
7. A.R. Dulloo, F. H. Ruddy, J. G. Seidel, and S. Seshadri, "Study of the radiation resistance of silicon carbide radiation detectors," submitted for publication.
8. A.R. Dulloo, F. H. Ruddy, J. M. Adams, J. S. Nico, and D. M. Gilliam, "The neutron response of miniature silicon carbide semiconductor detectors," Nucl. Instrum. Meth. A., to be published.
9. A.A. Burk, Jr., L. B. Rowland, G. Aug.ine, H. M. Hobgood, and R. H. Hopkins, "The impact of pregrowth conditions and substrate polytype on SiC epitaxial layer morphology," in Mater. Res. Soc. Symp. P roc., 1996, vol. 423, pp. 275-280.
10. J.M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, "Silicon carbide JFET radiation response," IEEE Trans. Nucl. Sci., vol. 39, pp. 1974-1981, 1992.