A framework for understanding displacement damage mechanisms in irradiated silicon devices

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3610-3620

  Srour, J R ^a,b   Palko, J W ^b  

^a IEEE   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

Clusters; Defects; Displacement damage; NIEL; Radiation effects; Silicon

Indexed keywords

CLUSTERS; DISPLACEMENT DAMAGE; NIEL;

DEFECTS; ION BOMBARDMENT; IRRADIATION; MATHEMATICAL MODELS; NEUTRONS; RADIATION EFFECTS;

SILICON;

EID: 33846298000     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885796     Document Type: Conference Paper

References (56)

1. J. R. Srour, C. J. Marshall, and P. W. Marshall, "Review of displacement damage effects in silicon devices," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 653-670, Jun. 2003.
2. J. R. Srour and D. H. Lo, "Universal damage factor for radiation-induced dark current in silicon devices," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2451-2459, Dec. 2000.
3. S. Kuboyama, H. Shindou, T. Hirao, and S. Matsuda, "Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2684-2689, Dec. 2002.
4. 60Co γ-radiation," IEEE Trans. Nucl. Sci., vol. 44, no. 3, pp. 834-839, Jun. 1997.
5. S. J. Watts, J. Matheson, I. H. Hopkins-Bond, A. Holmes-Siedle, A. Mohammadzadeh, and R. Pace, "A new model for generation-recombination in silicon depletion regions after neutron irradiation," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2587-2594, Dec. 1996.
6. K. Gill, G. Hall, and B. MacEvoy, "Bulk damage effects in irradiated silicon detectors due to clustered divacancies," J. Appl. Phys., vol. 82, pp. 126-136, Jul. 1997.
7. W. M. Chen, B. Monemar, E. Janzen, and J. L. Lindstrom, "Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in silicon," Phys. Rev. Lett., vol. 67, no. 14, pp. 1914-1917, Sep. 1991.
8. A. M. Frens, M. T. Bennebroek, A. Zakrzewski, J. Schmidt, W. M. Chen, E. Janzen, J. L. Lindstrom, and B. Monemar, "Observation of rapid direct charge transfer between deep defect levels in silicon," Phys. Rev. Lett., vol. 72, no. 18, pp. 2939-2942, May 1994.
9. A. Schenk and U. Krumbein, "Coupled defect-level recombination: Theory and application to anomalous diode characteristics," J. Appl. Phys., vol. 78, no. 5, pp. 3185-3192, Sep. 1995.
10. S. Wood, N. J. Doyle, J. A. Spitznagel, W. J. Choyke, R. M. More, J. N. McGruer, and R. B. Irwin, "Simulation of radiation damage in solids," IEEE Trans. Nucl. Sci., vol. 28, no. 6, pp. 4107-4122, Dec. 1981.
11. R. M. More and J. A. Spitznagel, "Primary recoil spectra and subcascade effects in ion bombardment experiments," Radiat. Effects, vol. 60, pp. 27-33, 1982.
12. G. P. Mueller, N. D. Wilsey, and M. Rosen, "The structure of displacement cascades in silicon," IEEE Trans. Nucl. Sci., vol. 29, no. 6, pp. 1293-1297, Dec. 1982.
13. T. Diaz de la Rubia and G. H. Gilmer, "Structural transformations and defect production in ion implanted silicon: A molecular dynamics simulation study," Phys. Rev. Lett., vol. 74, no. 13, pp. 2507-2510, Mar. 1995.
14. K. Nordlund, M. Ghaly, R. S. Averback, M. Caturla, T. Diaz de la Rubia, and J. Tarus, "Defect production in collision cascades in elemental semiconductors and FCC metals," Phys. Rev. B, vol. 57, no. 13, pp. 7556-7570, Apr. 1998.
15. [Online]. Available: http://www.srim.org
16. R. A. Weller, M. H. Mendenhall, and D. M. Fleetwood, "A screened Coulomb scattering module for displacement damage computations In Geant4," IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3669-3678, Dec. 2004.
17. G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton radiations," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1372-1379, Dec. 1993.
18. M. Yamaguchi and O. Nagai, "Effects of impurities on gamma-irradiated silicon crystal examined by photovoltaic effect of p-n junction diode," Jpn. J. Appl. Phys., vol. 11, no. 7, pp. 1016-1023, July 1992.
19. H. J. Stein, "Comparison of neutron and gamma-ray damage in n-type silicon," J. Appl. Phys., vol. 37, no. 9, pp. 3382-3384, Aug. 1966.
20. O. L. Curtis Jr., J. R. Srour, and R. B. Rauch, "Recombination studies on gamma-irradiated n-type silicon," J. Appl. Phys., vol. 43, no. 11, pp. 4638-4646, Nov. 1972.
21. R. A. Hewes, "Recombination lifetimes in gamma-irradiated silicon," J. Appl. Phys., vol. 39, no. 9, pp. 4106-4123, Aug. 1968.
22. R. G. Downing, J. R. Carter, and J. M. Denney, "The energy dependence of electron damage in silicon," Proc. 4th Photovoltaic Specialists Conf., vol. 1, pp. A-5-1-A-5-33, 1964.
23. M. Yamaguchi, A. Khan, S. J. Taylor, M. Imaizumi, T. Hisamatsu, and S. Matsuda, "A detailed model to improve the radiation resistance of Si space solar cells," IEEE Trans. Electron Devices, vol. 46, no. 10, pp. 2133-2138, Oct. 1999.
24. J. R. Srour, S. Othmer, and K. Y. Chiu, "Electron and proton damage coefficients in low-resistivity silicon," IEEE Trans. Nucl. Sci., vol. 22, no. 6, pp. 2656-2662, Dec. 1975.
25. O. L. Curtis Jr., "Effects of oxygen and dopant on lifetime in neutronirradiated silicon," IEEE Trans. Nucl. Sci., vol. 13, no. 6, pp. 33-38, Dec. 1966.
26. B. L. Gregory, "Minority carrier recombination in neutron irradiated silicon," IEEE Trans. Nucl. Sci., vol. 16, no. 6, pp. 53-62, Dec. 1969.
27. P. F. Lugakov and I. M. Filippov, "Radiation defect clusters in electron-irradiated silicon," Radiat. Effects, vol. 90, pp. 297-305, 1985.
28. D. Bielle-Daspet, "Effective recombination levels in n- and p-type silicon irradiated by 4.5 MeV electrons," Solid-State Electron., vol. 16, pp. 1103-1123, 1973.
29. S. Othmer and O. L. Curtis Jr., "Scanning electron microscope measurements of diffusion length in neutron-irradiated silicon," IEEE Trans. Nucl. Sci., vol. 20, no. 6, pp. 204-208, Dec. 1973.
30. J. R. Srour, "Stable-damage comparisons for neutron-irradiated silicon," IEEE Trans. Nucl. Sci., vol. 20, no. 6, pp. 190-195, Dec. 1973.
31. A. S. Azimov, S. M. Gorodetskii, G. M. Grigoreva, L. B. Kreinin, and A. P. Landsman, "Influence of disordered regions on the recombination in proton-irradiated p-type silicon," Soviet Phys. Semicond., vol. 7, pp. 1021-1025, 1974.
32. J. M. Denney and R. G. Downing, "Charged Particle Radiation Damage in Semiconductors, IX: Proton Radiation Damage in Silicon Solar Cells," Contract NAS5-1851, Rep. 8653-6026-KU-000, Aug. 1963.
33. J. M. Denney, R. G. Downing, M. E. Kirkpatrick, G. W. Simon, and W. K. Van Atta, "Charged Particle Radiation Damage in Semiconductors, IV: High Energy Proton Radiation Damage in Solar Cells," Contract NAS5-1851, Rep. 8653-6017-KU-000, Jan. 1963.
34. O. L. Curtis Jr. and J. R. Srour, "Recombination within disordered regions: influence of barrier height on recombination rate and injection level effects," IEEE Trans. Nucl. Sci., vol. 20, no. 6, pp. 196-203, Dec. 1973.
35. B. R. Gossick, "Disordered regions in semiconductors bombarded by fast neutrons," J. Appl. Phys., vol. 30, no. 8, pp. 1214-1218, Aug. 1959.
36. O. L. Curtis Jr., "The role of disordered regions in recombination of carriers in neutron-irradiated silicon and germanium," in Lattice Defects in Semiconductors, R. R. Hasiguti, Ed. Tokyo, Japan: Univ. Tokyo Press, 1968, pp. 333-350.
37. O. L. Curtis Jr., "Statistics of carrier recombination at disordered regions in semiconductors," J. Appl. Phys., vol. 39, no. 7, pp. 3109-3113, Jun. 1968.
38. D. M. Bielle-Daspet and G. D. Gasset, "Bulk carrier lifetime measurement from transient diffusion photocurrent in semiconductor diodes," Solid-State Electron., vol. 21, pp. 1219-1226, 1978.
39. O. W. Holland, C. W. White, M. K. El-Ghor, and J. D. Budai, "MeV, self-ion implantation in Si at liquid-nitrogen temperature - A study of damage morphology and its anomalous annealing behavior," J. Appl. Phys., vol. 68, no. 5, pp. 2081-2086, Sep. 1990.
40. S. U. Campisano, S. Coffa, V. Raineri, F. Priolo, and E. Rimini, "Mechanisms of amorphization in ion-implanted crystalline silicon," Nucl. Instrum. Meth. Phys. Res. B, vol. 80/81, pp. 514-518, 1993.
41. I. Jencic and I. M. Robertson, "Regrowth of heavy-ion implantation damage by electron beams," Mater. Sci. Semicond. Process., vol. 3, pp. 311-315, 2000.
42. S. E. Donnelly, R. C. Birtcher, V. M. Vishnyakov, and G. Carter, "Annealing of isolated amorphous zones in silicon," Appl. Phys. Lett., vol. 82, no. 12, pp. 1860-1862, Mar. 2003.
43. M. Alurralde, F. Paschoud, M. Victoria, and D. Gavillet, "The displacement damage produced in Si by 590 MeV protons," Nucl. Instrum. Meth. Phys. Res. B, vol. 80/81, pp. 523-527, 1993.
44. J. Yamasaki, S. Takeda, and K. Tsuda, "Elemental process of amorphization induced by electron irradiation in Si," Phys. Rev. B, vol. 65, pp. 115213-1-115213-10,2002.
45. I. Jencic, M. W. Bench, and I. M. Robertson, "Electron-beam-induced crystallization of isolated amorphous regions in Si, Ge, GaP, And GaAs," J. Appl. Phys., vol. 78, pp. 974-982, July 1995.
46. M.-J. Caturla, T. Diaz de la Rubia, L. A. Marques, and G. H. Gilmer, "Ion-beam processing of silicon at keV energies: A molecular dynamics study," Phys. Rev. B, vol. 54, no. 23, pp. 16 683-16 695, Dec. 1996.
47. G. Otto, G. Hobler, and K. Gartner, "Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation," Nucl. Instrum. Meth. Phys. Res. B, vol. 202, pp. 114-119, 2003.
48. T. Diaz de la Rubia, "Irradiation-induced defect production in elemental metals and semiconductors: A review of recent molecular dynamics studies," Annu. Rev. Mater. Sci., vol. 26, pp. 613-649, 1996.
49. L. Marques, L. Pelaz, M. Aboy, L. Enriquez, and J. Barbolla, "Microscopic description of the irradiation-induced amorphization in silicon," Phys. Rev. Lett., vol. 91, no. 13, pp. 135504-1-135504-4, Sep. 2003.
50. L. Pelaz, L. A. Marques, M. Aboy, and J. Barbolla, "Atomistic modeling of amorphization and recrystallization in silicon," Appl. Phys. Lett., vol. 82, no. 13, pp. 2038-2040, Mar. 2003.
51. V. A. J. van Lint, R. E. Leadon, and J. F. Colwell, "Energy dependence of displacement effects in semiconductors," IEEE Trans. Nucl. Sci., vol. 19, no. 6, pp. 181-185, Dec. 1972.
52. G. P. Summers, C. J. Dale, E. A. Burke, E. A. Wolicki, P. W. Marshall, and M. A. Gehlhausen, "Correlation of particle-induced displacement damage in silicon," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1134-1139, Dec. 1987.
53. G. P. Summers, E. A. Burke, and M. A. Xapsos, "Displacement Damage Analogs to Ionizing Radiation Effects," Radiat. Meas., vol. 24, pp. 1-8, 1995.
54. A. Candelori (on behalf of the CERN RD50 Collaboration), "Semiconductor materials and detectors for future very high luminosity colliders," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2554-2561, Dec. 2005.
55. M. Moll, "Radiation tolerant semiconductor sensors for tracking detectors," Nucl. Instrum. Meth. Phys. Res. A, vol. 565, pp. 202-211, 2006.
56. C. J. Dale, P. W. Marshall, E. A. Burke, G. P. Summers, and E. A. Wolicki, "High energy electron induced displacement damage in silicon," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1208-1214, Dec. 1988.