Impact of Proton Irradiation on the Static and Dynamic Characteristics of High-Voltage 4H-SiC JBS Switching Diodes

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1821-1826

  Luo, Zhiyun ^a   Chen, Tianbing ^b   Cressler, John D ^b   Sheridan, David C ^c   Williams, John R ^d   Reed, Robert A ^e   Marshall, Paul W ^e  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IBM MICROELECTRONICS   (United States)

^d AUBURN UNIVERSITY   (United States)

^e NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

Diode; Junction barrier Schottky (JBS); Proton radiation; Schottky barrier diodes (SBD); Silicon carbide (SiC)

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DOSIMETRY; LEAKAGE CURRENTS; METALLIZING; POWER ELECTRONICS; PROTON IRRADIATION; RADIATION DETECTORS; SEMICONDUCTOR DIODES; SWITCHING;

JUNCTION BARRIER SCHOTTKY (JBS); SCHOTTKY BARRIER DIODES (SBD);

SILICON CARBIDE;

EID: 1242265513     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821806     Document Type: Conference Paper

References (20)

1. M. Bhatnagar and B. J. Baliga, "Comparison of 6H-S1C, 3C-SiC, and Si for power devices," IEEE Trans. Electron Devices, vol. 40, pp. 645-655, Mar. 1993.
2. B. J. Baliga, Power Semiconductor Devices. Boston, MA: PWS, 1996.
3. S. Seshadri, A. R. Dulloo, F. H. Ruddy, J. G. Seidel, and L. B. Rowland, "Demonstration of an SiC neutron detector for high-radiation environments," IEEE Trans. Electron Devices, vol. 46, pp. 567-571, June 1999.
4. J. McGarrity, F. McLean, W. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. Oakley, "Silicon carbide JFET radiation response," IEEE Trans. Nuclear Science, vol. 39, pp. 1974-1981, Dec. 1992.
5. T. Ohshima, M. Yoshikawa, H. Itoh, Y. Aoki, and I. Nashiyama, "g-Ray irradiation effects on 6H-SiC MOSFET," Mater. Sci. Eng. B, vol. 61-62, pp. 480-484, 1999.
6. 2 interface," IEEE Trans. Nucl. Sci., vol. 48, pp. 2229-2232, Dec. 2001.
7. S. E. Saddow, M. Capano, J. A. Cooper, M. S. Mazzola, J. Williams, and J. B. Casady, "High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching," Mater. Sci. Forum, vol. 338-342, p. 901, 1999.
8. D. C. Sheridan, G. Niu, J. N. Merrett, J. D. Cressler, C. Ellis, and C. C. Tin, "Design and fabrication of planar guard ring termination for high-voltage SiC diodes," Solid-State Electron., vol. 44, pp. 1367-1372, 2000.
9. G. C. Messenger, "A summary review of displacement damage from high enerry radiation in silicon semiconductors and semiconductor devices," IEEE Trans. Nucl. Sci., vol. 39, pp. 468-473. June 1992.
10. D. C. Sheridan, G. Niu, J. N. Merrett, J. D. Cressler, C. Ellis, and C. C. Tin, "Design and fabrication of planar guard ring termination for high-voltage SiC diodes," Solid-State Electron., vol. 44, pp. 1367-1372, 2000.
11. L. Storasta, F. H. C. Carlsson, S. G. Sridhara, D. Aberg, J. P. Bergman, A. Hallen, and E. Janzen, "Proton irradiation induced defects in 4H-SiC." Mater. Sci. Forum, vol. 353-356, pp. 431-434, 2001.
12. H. J. von Bardeleben and J. L. Cantin, "Intrinsic defects in 6H-SiC generated by electron irradiation at the silicon displacement threshold," Mater. Sci. Forum, vol. 353-356, pp. 509-512, 2001.
13. I. N. Makeeva, S. M. Okulov, T. L. Petrenko, T. T. Petrenko, and H. J. von Bardeleben, "EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC," Mater. Sci. Forum, vol. 353-356, pp. 517-520, 2001.
14. A. M. Strelchuk, A. A. Lebedev, V. V. Kozlovski, N. Natali, S. Savkina, D. V. Davydov, V. V. Solov'ev, and M. G. Rastegaeva, "Doping of 6H-SiC pn structures by proton irradiation," Nucl. Instrum. Methods Phys. Res. B, vol. 147, pp. 74-78, 1998.
15. D. C. Look and J. R. Sizelove, "Defect production in electron-irradiated n-type GaAs," J. Appl. Phys., vol. 62, no. 9, pp. 3660-3664, 1987.
16. W. A. Doolittle, A. Rohatgi, R. Ahrenkiel, D. Levi, G. Augustine, and R. Hopkins, "Understanding the role of defects in limiting the minority carrier lifetime in SiC," in Proc. MRS Power Semiconductor Materials and Devices Symp., Boston, MA, 1997, pp. 197-202.
17. S. M. Y. Hasan, S. L. Rosier, R. D. Schritnpf, and K. F. Galloway, "Effect of neutron irradiation on the breakdown voltage of power MOSFET's," IEEE Trans. Nucl. Sci., vol. 41, pp. 2719-2726, Dec. 1994.
18. 2/4H-SiC MOS capacitors," Solid-State Electron., vol. 46, no. 12, pp. 2213-2235, 2002.
19. MEDICI 2-D Semiconductor Device Simulator, 4.3 ed., Avant! Corp., Palo Alto, CA, 1999.
20. F. J. Niedernostheide, M. Schmitt, H. J. Schulze, U. Kellner-werdehausn, A. Frohnmeyer, and G. Wachutka, "Analysis of radiation-induced defects and performance conditioning in high-power devices," J. Electrochem. Soc., vol. 150, no. 1, pp. 15-21, 2003.