Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Solar Energy Materials and Solar Cells

Volumn 75, Issue 1-2, 2003, Pages 115-120

  Tanaka, Tooru ^a   Yamaguchi, Toshiyuki ^b   Wakahara, Akihiro ^c   Yoshida, Akira ^c   Taniguchi, Ryoichi ^d   Matsuda, Yatsuka ^d   Fujishiro, Masatoshi ^d  

^a SAGA UNIVERSITY   (Japan)

^b WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^d Osaka Prefecture University   (Japan)

Author keywords

CuInSe2; Electrical property; Radiation damage; Solar cell; Thin film

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COPPER COMPOUNDS; ELECTRON IRRADIATION; ENERGY GAP; EPITAXIAL GROWTH; HALL EFFECT; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS;

THIN FILM SOLAR CELLS;

SOLAR CELLS;

EID: 0037209890     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00117-4     Document Type: Article

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