Silicon carbide PiN diodes as radiation detectors

IEEE Nuclear Science Symposium Conference Record

Volumn 3, Issue , 2005, Pages 1236-1239

  Phlips, Bernard F ^a,b   Hobart, Karl D ^a,b   Kub, Francis J ^a,b   Stahlbush, Robert E ^a,b   Das, Mrinal K ^a,c   Hull, Brett A ^b,c   De Geronimo, Gianluigi ^a,d   O'Connor, Paul ^a,d  

^a IEEE   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COLLECTION; HIGH POWER DIODES; SIC; SILICON DEVICES;

CAPACITANCE; DOSIMETRY; PHOTONS; RADIATION DAMAGE; SEMICONDUCTOR DIODES; SILICON CARBIDE;

RADIATION DETECTORS;

EID: 33748368573     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2005.1596542     Document Type: Conference Paper

References (10)

1. F. H. Ruddy, A. R. Dulloo, J. G. Seidel, S. Seshadri, and L. B. Rowland, "Development of a silicon carbide radiation detector, IEEE Trans. Nucl. Sci, vol.45, no. 3, pp. 536-541, June 1998.
2. A. R. Dulloo, F. H. Ruddy, J. G. Seidel, C. Davison, T. Flinchbaugh, and T. Daubenspeck, "Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors," IEEE Trans. Nucl. Sci., vol. 46, pp. 275-279, June 1999.
3. RD50 Status Report 2002/2003, CERN-LHCC-2003-058, 2003.
4. G. Bertuccio and R. Casiraghi, "Study of silicon carbide for X-ray detection and spectroscopy", IEEE Trans. Nucl. Sci., vol. 50, pp. 175-185, February 2003.
5. M. K. Das, J. J. Sumakeris, B. A. Hull, J. Richmond, S. Krishnaswami and A. R. Powell, "Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields", Mater. Sci. Forum, Vol 483-485, pp. 965-968, 2005.
6. G. P. Golubev, V. S. Vavilov, and V. D. Egorov, "Energy of ionization by electrons in germanium and silicon carbide crystals," Sov. Phys. Solid Stat, vol. 7, no. 12, pp. 3000-3001, June 1966.
7. M. Rogalla, K. Runge, and A. Soldner-Rembold, "Particle detectors based on semi-insulating silicon carbide," Nucl. Phys. B (Proc. Suppl.), vol. 78, p. 516, 1999.
8. G. De Geronimo, P. O'Connor, R. H. Beuttenmuller, Z. Li, A. J. Kuczewski, and D. P. Siddons, "Development of a high-rate high-resolution detector for EXAFS experiments", IEEE Trans. Nucl. Sci., vol. 50, no. 4, pp. 885-891, August 2003.
9. U. Fano, "Ionization yield of rations. II. the fluctuations of the number of ions", Phys. Rev., vol. 72, pp.26-29, 1947.
10. G. Bertuccio, R. Casiraghi, A. Cetronio, C. Lanzieri and F. Nava, "Low-noise silicon carbide X-ray sensor with wide operating temperature range", Electronics Letters, vol. 40, no. 3, pp. 173-174, February 2004.