Characterizations of pulsed laser deposited SiC thin films

Journal of Non-Crystalline Solids

Volumn 353, Issue 52-54, 2007, Pages 4660-4665

  Katharria, Y S ^a   Kumar, Sandeep ^a   Prakash, Ram ^b   Choudhary, R J ^b   Singh, F ^a   Phase, D M ^b   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

Atomic force and scanning tunneling microscopy; Laser deposition; Raman scattering; UPS XPS; X ray diffraction

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; PRECIPITATES; PULSED LASER DEPOSITION; RAMAN SCATTERING; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE ORDERING; SPECTROSCOPIC MEASUREMENTS;

THIN FILMS;

EID: 36549078690     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.07.008     Document Type: Article

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