Effect of annealing on SiC thin films prepared by pulsed laser deposition

Diamond and Related Materials

Volumn 8, Issue 12, 1999, Pages 2099-2102

  Huang, Jipo ^a   Wang, Lianwei ^a   Wen, Jun ^b   Wang, Yuxia ^b   Lin, Chenglu ^a   Östling, Mikael ^c  

^a Shanghai Metallurgic Inst   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Annealing; Pulsed laser deposition; SiC thin films

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; DEPOSITION; PHASE TRANSITIONS; PULSED LASER APPLICATIONS; SILICON CARBIDE; STOICHIOMETRY; THERMAL EFFECTS; THIN FILMS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

PULSED LASER DEPOSITION; VACUUM ANNEALING;

SEMICONDUCTING FILMS;

EID: 0033330478     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(99)00163-6     Document Type: Article

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