Growth of SiC and SiCxNy films by pulsed laser ablation of SiC in Ar and N2 environments

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1311-1315

  Soto, G ^a,b   Samano, E C ^a   Machorro, R ^a   Cota, L ^a  

^a CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA   (Mexico)

^b CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001597593     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581143     Document Type: Article

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