Electrical and structural properties of rapid thermal annealed amorphous silicon carbide films

Physica Status Solidi (A) Applied Research

Volumn 169, Issue 1, 1998, Pages 67-76

  Choi, W K ^a   Ong, T Y ^a   Han, L J ^a   Loh, F C ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE MEASUREMENT; CRYSTAL ORIENTATION; ELECTRIC FREQUENCY MEASUREMENT; RAPID THERMAL ANNEALING; SILICON CARBIDE; SPUTTER DEPOSITION;

RADIO FREQUENCY SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0032157110     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199809)169:1<67::AID-PSSA67>3.0.CO;2-H     Document Type: Article

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