Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy

Applied Physics Letters

Volumn 79, Issue 6, 2001, Pages 755-757

  Nakazawa, Hideki ^a   Suemitsu, Maki ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039782253     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1390476     Document Type: Article

References (11)

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