Evaluation of SiC as a substrate material for nitride materials heteroepitaxy

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 53-55

  Masri, P ^a   Rouhani Laridjani, M ^a   Breton, O ^b   Averous, M ^a  

^a CNRS   (France)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Buffer layers; Elasticity; Nitrides; Optimizaation; Silicon carbide; Strained heterointerfaces

Indexed keywords

CRYSTAL LATTICES; ELASTICITY; INTERFACES (MATERIALS); LATTICE VIBRATIONS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; NITRIDES; OPTICAL CORRELATION; SAPPHIRE; SILICON CARBIDE; STRAIN; SUBSTRATES; THERMAL EXPANSION;

HETEROEPITAXY; HETEROINTERFACES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035933163     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00776-5     Document Type: Article

References (18)