High temperature annealing of hydrogenated amorphous silicon carbide thin films

Thin Solid Films

Volumn 384, Issue 2, 2001, Pages 173-176

  Wang, Yihua ^a   Lin, Jianyi ^a   Huan, Cheng Hon Alfred ^a   Feng, Zhe Chuan ^b   Chua, Soo Jin ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE EFFECTS; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; THIN FILMS;

HETEROEPITAXY;

SEMICONDUCTING FILMS;

EID: 0034818407     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01867-8     Document Type: Article

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