Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1305-1308

  Chen, J ^a   Steckl, A J ^a   Loboda, M J ^b  

^a University of Cincinnati   (United States)

^b DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342613907     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590006     Document Type: Article

References (14)

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