Epitaxial growth of n-type SiC using phosphine and nitrogen as the precursors

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7587-7592

  Wang, Rongjun ^a   Bhat, Ishwara B ^a   Paul Chow, T ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ION IMPLANTATION; NITROGEN; PHASE COMPOSITION; THERMODYNAMICS;

DOPANT PRECURSORS;

SILICON CARBIDE;

EID: 0037115626     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516257     Document Type: Article

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