Raman microprobe mapping of residual microstresses in 3C-SiC film epitaxial lateral grown on patterned Si(1 1 1)

Applied Surface Science

Volumn 228, Issue 1-4, 2004, Pages 10-16

  Lee, C J ^a   Pezzotti, G ^a   Okui, Y ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

3C SiC film; Chemical vapor deposition; Raman microprobe mapping

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITE MICROMECHANICS; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; OPTIMIZATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICES; SILICON; STRESSES; SURFACE CHEMISTRY; THERMAL EXPANSION;

3C-SIC FILMS; HETEROEPITAXIAL GROWTH; MICROSTRESSES; RAMAN MICROPROBE MAPPING;

CARBON FIBERS;

EID: 1942532913     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.01.052     Document Type: Article

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