Effect of the thermal annealing on the electrical and physical properties of SiC thin films produced by RF magnetron sputtering

Thin Solid Films

Volumn 515, Issue 1, 2006, Pages 170-175

  Rajab, S M ^a   Oliveira, I C ^a   Massi, M ^a   Maciel, H S ^a   dos Santos Filho, S G ^b   Mansano, R D ^b  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Annealing; Leakage current; MIS structures; SiC

Indexed keywords

CONDUCTANCE-VOLTAGE CHARACTERISTICS; MIS STRUCTURES; UNANNEALED FILMS;

ANNEALING; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

THIN FILMS;

EID: 33750086081     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.052     Document Type: Article

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